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Nanowire Transistors

Physics of Devices and Materials in One Dimension

Format: Hardback
Publisher: Cambridge University Press, Cambridge, United Kingdom
Published: 21st Apr 2016
Dimensions: w 180mm h 253mm d 16mm
Weight: 680g
ISBN-10: 1107052408
ISBN-13: 9781107052406
Barcode No: 9781107052406
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Synopsis
From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in academia and industry.

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'This is a very interesting and advanced book that gives a deep introduction to and explanation of the physics behind nanowire transistors ... It is well written, organized, and self-explanatory, and can be used as a reference by those who wish to enter into the field of nanowire and nanostructure-based electronics. The book has many up-to-date references and clear and precise text with plenty of figures and diagrams, and therefore is a fundamental resource. ... This is a well-organized book wherein the preceding chapters are used as the basis for understanding the following ones. ... [It] is suitable for graduate researchers in materials science and semiconductor devices as well as engineers who want deeper insight into the explanation of nanowire-based devices.' Joana Vaz Pinto, MRS Bulletin