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Dopants and Defects in Semiconductors

Format: Hardback
Publisher: Taylor & Francis Ltd, London, United Kingdom
Imprint: CRC Press
Published: 28th Feb 2018
Dimensions: w 181mm h 265mm d 23mm
Weight: 816g
ISBN-10: 113803519X
ISBN-13: 9781138035195
Barcode No: 9781138035195
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Synopsis
Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" Materials Today "... well written, with clear, lucid explanations ..." Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

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"The second edition of this textbook lays the groundwork for both the classical and modern developments in the theory of semiconductors. This book is significant both for its presentation of the basic principles of the theory of defects in semiconductors and for its exposition of recent developments in the field, such as LEDs and laser diodes."

--Christian Brosseau, OSA Fellow and professor of physics, Universite de Bretagne Occidentale, Brest, France